1996. 1. 28
1/3
SEMICONDUCTOR
TECHNICAL DATA
KN2907/A
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=-50nA(Max.) ; V
CE
=-30V, V
EB
=-0.5V.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) ; I
C
=-150mA, I
B
=-15mA.
Complementary to the KN2222/2222A.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
KN2907 KN2907A
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-40
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-600
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1996. 1. 28
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Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
KN2907/A
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CEX
V
CE
=-30V, V
EB
=-0.5V
-
-
-50
nA
Collector Cut-off Current
KN2907
I
CBO
V
CB
=-50V, I
E
=0
-
-
-20
nA
KN2907A
-
-
-10
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A, I
E
=0
-60
-
-
V
Collector-Emitter *
Breakdown Voltage
KN2907
V
(BR)CEO
I
C
=-10mA, I
B
=0
-40
-
-
V
KN2907A
-60
-
-
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5
-
-
V
DC Current Gain
KN2907
h
FE
(1)
I
C
=-0.1mA, V
CE
=-10V
35
-
-
KN2907A
75
-
-
KN2907
h
FE
(2)
I
C
=-1.0mA, V
CE
=-10V
50
-
-
KN2907A
100
-
-
KN2907
h
FE
(3)
I
C
=-10mA, V
CE
=-10V
75
-
-
KN2907A
100
-
-
KN2907
h
FE
(4) *
I
C
=-150mA, V
CE
=-10V
100
-
300
KN2907A
KN2907
h
FE
(5) *
I
C
=-500mA, V
CE
=-10V
30
-
-
KN2907A
50
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
1
I
C
=-150mA, I
B
=-15mA
-
-
-0.4
V
V
CE(sat)
2
I
C
=-500mA, I
B
=-50mA
-
-
-1.6
Base-Emitter Saturation Voltage *
V
BE(sat)
1
I
C
=-150mA, I
B
=-15mA
-
-
-1.3
V
V
BE(sat)
2
I
C
=-500mA, I
B
=-50mA
-
-
-2.6
Transition Frequency
f
T
V
CE
=-20V, I
C
=-50mA, f=100MHz
200
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
8
pF
1996. 1. 28
3/3
KN2907/A
Revision No : 0
CAPACITANCE C (pF)
0
ob
-30
-10
-3
-1
COLLECTOR-BASE VOLTAGE V (V)
CB
C - V
h - I
C
COLLECTOR CURRENT I (mA)
-1
-3
-10
-30
1k
FE
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
SATURATION VOLTAGE
-3
-1
BE(sat)
-30
-10
C
V ,V - I
FE
C
-300
-1k
30
50
100
300
500
-100
V =-10V
CE
BE(sat)
CE(sat) C
V ,V (V)
CE(sat)
-100
-300
-1k
-0.01
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
-10
V
BE(sat)
CE(sat)
V
ob
CB
-100
-200
I /I =10
C B
2
4
6
8
12
I =0
f=1MHz
E
10
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
P (mW)
25
50
75
100
125
150
175
100
200
300
400
500
600
700
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